stpr1020cb(-tr) preliminary datasheet a august 1995 - ed : 1b high efficiency fast recovery rectifier diodes i f(av) 2 x 4 a v rrm 200 v t rr (max) 35 ns main product characteristics suited for smps and drives surface mount very low forward losses negligible switching losses high surge current capability surface mount device tape and reel option : -tr features and benefits dual rectifier suited for switch mode and high fre- quency converters. packaged in dpak, this surface mount device is intended for use in low voltage, high frequency in- verters, free wheeling and polarity protection appli- cations. description dpak (plastic) 4 1 2 3 symbol parameter value unit v rrm repetitive peak reverse voltage 200 v v rsm non repetitive surge reverse voltage 220 v i f(rms) rms forward current per diode 10 a i f(av) average forward current t case = 130c d = 0.5 per diode per device 5 10 a i fsm surge non repetitive forward current tp = 10 ms sinusoidal per diode 70 a tstg storage temperature range - 40 to + 150 c tj max. junction temperature 150 c absolute maximum ratings 2, 4(tab) 3 1 1/3
symbol parameter value unit r th (j-c) junction to case thermal resistance per diode 5 c/w total 2.7 r th (c) coupling c/w when the diodes 1 and 2 are used simultaneously : d tj(diode 1) = p(diode) x r th (per diode) + p(diode 2) x r th (c) thermal resistances symbol tests conditions tests conditions min. typ. max. unit i r * reverse leakage current tj = 25 cv r = v rrm 20 m a tj = 100 c 0.15 0.5 ma v f ** forward voltage drop tj = 25 ci f = 10 a 1.25 v tj = 100 ci f = 5 a 0.8 0.85 static electrical characteristics (per diode) pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 m s, duty cycle < 2% to evaluate the maximum conduction losses use the following equation : p = 0.7 x i f(av) + 0.030 i f 2 (rms) symbol test conditions min. typ. max. unit t rr tj = 25c i f = 1a v f = 30v di f /dt = -50 a /ms 35 ns t fr tj = 25c i f = 1a v fr = 1.1 x v f tr = 10 ns 20 ns v fp tj = 25c i f = 1a tr = 10 ns 5 v recovery characteristics a stpr1020cb(-tr) 2/3
information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any inf ringement of patents or other rights of third parties which may res ult from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to c hange wi thout notice. this publication supersedes and replaces all information previously supplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - printed in italy - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. package mechanical data dpak h l1 g b l2 e b2 d a1 0.60 min. flat zone c1 a c ref. dimensions millimeters inches min. typ. max min. typ. max. a 2.20 2.40 0.086 0.094 a1 0.90 1.10 0.035 0.043 b 0.64 0.90 0.025 0.035 b2 5.20 5.40 0.204 0.212 c 0.45 0.60 0.017 0.023 c1 0.48 0.60 0.018 0.023 d 6.00 6.20 0.236 0.244 e 6.40 6.60 0.251 0.259 g 4.40 4.60 0.173 0.181 h 9.35 10.10 0.368 0.397 l1 0.60 1.00 0.023 0.039 l2 0.80 0.031 a stpr1020cb(-tr) 3/3
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